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APT60M80L2VFR 600V 65A 0.080 POWER MOS V(R) FREDFET Power MOS V(R) is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V(R) also achieves faster switching speeds through optimized gate layout. L2VFR TO-264 Max * TO-264 MAX Package * Faster Switching * Lower Leakage MAXIMUM RATINGS Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage * Avalanche Energy Rated * FAST RECOVERY BODY DIODE G D S All Ratings: TC = 25C unless otherwise specified. APT60M80L2VFR UNIT Volts Amps 600 65 260 30 40 833 6.67 -55 to 150 300 65 50 4 1 Continuous Drain Current @ TC = 25C Pulsed Drain Current Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current 1 Volts Watts W/C C Amps mJ (Repetitive and Non-Repetitive) 1 Repetitive Avalanche Energy Single Pulse Avalanche Energy 3200 STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250A) Drain-Source On-State Resistance 2 MIN TYP MAX UNIT Volts 600 0.080 250 1000 (VGS = 10V, ID = 32.5A) Ohms A 050-7266 Rev A 6-2004 Zero Gate Voltage Drain Current (VDS = 600V, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 480V, VGS = 0V, TC = 125C) Gate-Source Leakage Current (VGS = 30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 5mA) 100 2 4 nA Volts CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com DYNAMIC CHARACTERISTICS Symbol C iss Coss C rss Qg Qgs Qgd td(on) tr td(off) tf Eon Eoff Eon Eoff Symbol IS ISM VSD dv/ dt APT60M80L2VFR Test Conditions VGS = 0V VDS = 25V f = 1 MHz VGS = 10V VDD = 300V ID = 65A @ 25C RESISTIVE SWITCHING VGS = 15V VDD = 300V ID = 65A @ 25C 6 INDUCTIVE SWITCHING @ 25C VDD = 400V, VGS = 15V INDUCTIVE SWITCHING @ 125C VDD = 400V, VGS = 15V ID = 65A, RG = 5 ID = 65A, RG = 5 RG = 0.6 Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge 3 MIN TYP MAX UNIT pF 13300 1610 700 590 50 310 14 24 70 31 1880 2830 3100 3345 MIN TYP MAX Gate-Source Charge Gate-Drain ("Miller ") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy Characteristic / Test Conditions Continuous Source Current (Body Diode) Pulsed Source Current Diode Forward Voltage Peak Diode Recovery 1 2 dt 6 nC ns J SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS UNIT Amps Volts V/ns ns C Amps 65 280 1.3 15 Tj = 25C Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C MIN (Body Diode) (VGS = 0V, IS = -65A) 5 dv/ t rr Q rr IRRM Reverse Recovery Time (IS = -65A, di/dt = 100A/s) Reverse Recovery Charge (IS = -65A, di/dt = 100A/s) Peak Recovery Current (IS = -65A, di/dt = 100A/s) Characteristic Junction to Case Junction to Ambient 300 600 2.3 7 16 32 TYP MAX THERMAL CHARACTERISTICS Symbol RJC RJA UNIT C/W 0.15 40 1 Repetitive Rating: Pulse width limited by maximum junction temperature 2 Pulse Test: Pulse width < 380 s, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471 0.16 , THERMAL IMPEDANCE (C/W) 4 Starting Tj = +25C, L = 1.51mH, RG = 25, Peak IL = 65A 5 dv/dt numbers reflect the limitations of the test circuit rather than the device itself. IS -ID65A di/dt 700A/s VR 600V TJ 150C 6 Eon includes diode reverse recovery. See figures 18, 20. APT Reserves the right to change, without notice, the specifications and information contained herein. 0.14 0.12 0.9 0.7 0.10 0.08 0.06 0.3 0.04 0.02 0 10-5 0.1 0.05 10-4 SINGLE PULSE 0.5 Note: PDM t1 t2 Peak TJ = PDM x ZJC + TC Duty Factor D = t1/t2 050-7266 Rev A 6-2004 Z JC 10-3 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION 1.0 Typical Performance Curves 180 160 ID, DRAIN CURRENT (AMPERES) APT60M80L2VFR 6.5V 15 &10V 6V 140 120 100 80 60 40 20 0 RC MODEL Junction temp. (C) 0.0456 Power (watts) 0.104 Case temperature. (C) 0.493F 0.0272F 5.5V 5V 4.5V 4V RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL 200 180 ID, DRAIN CURRENT (AMPERES) VDS> ID (ON) x RDS (ON)MAX. 250SEC. PULSE TEST @ <0.5 % DUTY CYCLE 0 5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS 1.4 V GS NORMALIZED TO = 10V @ I = 32.5A D 160 140 120 100 80 60 40 20 0 0 TJ = +125C TJ = +25C TJ = -55C 1.3 1.2 VGS=10V 1.1 1.0 0.9 0.8 VGS=20V 1 2 3 4 5 6 7 8 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) FIGURE 4, TRANSFER CHARACTERISTICS 0 70 60 50 40 30 20 10 0 25 BVDSS, DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED) 1.15 20 40 60 80 100 120 140 160 ID, DRAIN CURRENT (AMPERES) FIGURE 5, RDS(ON) vs DRAIN CURRENT ID, DRAIN CURRENT (AMPERES) 1.10 1.05 1.00 0.95 RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED) 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE 2.5 I D 0.90 -50 = 32.5A = 10V -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 050-7266 Rev A 6-2004 V GS 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 8, ON-RESISTANCE vs. TEMPERATURE VGS(TH), THRESHOLD VOLTAGE (NORMALIZED) 2.0 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE -25 260 100 OPERATION HERE LIMITED BY RDS (ON) 50,000 APT60M80L2VFR Ciss ID, DRAIN CURRENT (AMPERES) C, CAPACITANCE (pF) 100S 10,000 5000 10 Coss 1000 500 Crss 1mS 10mS 1 TC =+25C TJ =+150C SINGLE PULSE 1 10 100 600 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 10, MAXIMUM SAFE OPERATING AREA D 0 10 20 30 40 50 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 11,CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE IDR, REVERSE DRAIN CURRENT (AMPERES) 100 16 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) I = 65A 200 100 TJ =+150C 12 VDS=120V 8 TJ =+25C VDS=300V VDS=480V 10 4 100 200 300 400 500 600 700 800 Qg, TOTAL GATE CHARGE (nC) FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE 600 500 td(on) and td(off) (ns) 0 0 1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE 200 V DD G = 400V R = 5 td(off) V DD G T = 125C J 150 tr and tf (ns) L = 100H 400 300 200 100 = 400V tf 100 R = 5 T = 125C J L = 100H 50 td(on) 0 30 70 90 110 ID (A) FIGURE 14, DELAY TIMES vs CURRENT DD G tr 0 30 50 8,000 V = 400V 70 90 110 ID (A) FIGURE 15, RISE AND FALL TIMES vs CURRENT 25,000 V I DD 50 = 400V R = 5 D J = 65A T = 125C J E ON includes diode reverse recovery. Eoff SWITCHING ENERGY (J) SWITCHING ENERGY (J) 6,000 L = 100H 20,000 T = 125C L = 100H E ON includes diode reverse recovery. Eoff 15,000 4,000 Eon 2,000 10,000 Eon 5,000 050-7266 Rev A 6-2004 70 80 90 100 110 ID (A) FIGURE 16, SWITCHING ENERGY vs CURRENT 0 30 0 40 50 60 10 15 20 25 30 35 40 45 50 RG, GATE RESISTANCE (Ohms) FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE 0 5 Typical Performance Curves APT60M80L2VFR 10% Gate Voltage 90% TJ125C Gate Voltage TJ125C td(on) Drain Current 90% td(off) tr 90% Drain Voltage tf 5% Switching Energy 10% 5% Drain Voltage Switching Energy 10% 0 Drain Current Figure 18, Turn-on Switching Waveforms and Definitions Figure 19, Turn-off Switching Waveforms and Definitions APT60DF60 V DD ID V DS G D.U.T. Figure 20, Inductive Switching Test Circuit TO-264 MAXTM(L2VFR) Package Outline 4.60 (.181) 5.21 (.205) 1.80 (.071) 2.01 (.079) 19.51 (.768) 20.50 (.807) 5.79 (.228) 6.20 (.244) Drain 25.48 (1.003) 26.49 (1.043) 2.29 (.090) 2.69 (.106) 19.81 (.780) 21.39 (.842) 2.29 (.090) 2.69 (.106) 0.48 (.019) 0.84 (.033) 2.59 (.102) 3.00 (.118) 0.76 (.030) 1.30 (.051) 2.79 (.110) 3.18 (.125) 5.45 (.215) BSC 2-Plcs. Dimensions in Millimeters and (Inches) APT's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved. 050-7266 Rev A 6-2004 Gate Drain Source |
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